2012年9月11日，应超晶格室谭平恒研究员的邀请，台湾大学光电所暨电机系教授冯哲川来半导体所主讲174期“黄昆半导体科学技术论坛”。讲座和冯哲川教授的简介如下：
报告题目: Raman and Correlated Investigation on Advanced Semiconductors and Nano/Quantum Structures
报 告 人: Prof. Zhe-Chuan FENG (馮哲川教授 台灣大學光電所暨電機系)
时间: 2012年9月11日(星期二) 上午10:00
地点: 中国科学院半导体研究所学术会议中心
Abstract: Raman scattering is a powerful technology for solid materials research. The author, since 1983, has been devoted in employing Raman technology to study a wide range of semiconductors, quantum wells (QWs) & superlattices (SLs), oxdies and nano-structural materials, including IV-IV; II-VI; III-V; III-Nitides; ZnO & MgZnO, AlZnO; Oxides; Nano-structures and so on. Different Raman systems under different measurement conditions of varied excitation lasers, temperature and pressure, have been used. Especially, Raman measurements have been combined with other materials analytical and advanced techniques to realize the interdisciplinary studies on studied materials and to help the R&D of new advanced materials/structures. This presentation reports on our wide Raman scattering and correlated research, including the combination with other advanced analytic methods, and results in these fields. The following topics are given: Raman and TEM on SiC polytype conversion; Correction on Raman mode assignments from GaN/sapphire, Raman on anisotropic property of wurtzite GaN; Resonant Raman scattering from III-Nitrides and ZnO, MgZnO wide gap semiconductors; Temperature varied (80K-870K) Raman studies on 4H-SiC, anomalous T-behavior; Combined Raman and RBS on InN; Raman and Synchrotron XAS studies on 3C-SiC/Si; Raman and XAS of GaN grown on different substrates and by different techniques; Raman scattering and X-ray absorption properties of carbon nanotube arrays; Cross-section Raman measurements on thin 3C-SiC and GaN layers; Surface optical modes from ZnO and GaN nano-rods; Raman scattering on AlN nanowires, wire thickness dependence; Brillouin scattering of GaN and AlGaN; Infrared reflectance and transmission spectra in II-VI alloys and superlattices. We could talk more on some topics. It’s hopeful to penetrate into the fundamental concepts and properties, to explore & solve some tough/unsolved problems, to promote the research in related fields, and to establish/develop the cross-strait collaboration & exchanging, for students and professors.
Biography: Prof. Zhe Chuan FENG, received the BS (1968) and M.S. (1981) from Peking University, and Ph. D in University of Pittsburgh, 1987. He had worked at Emory University (1988-92), National University of Singapore (92-94), Georgia Tech (95, 2002-03), EMCORE Corporation (95-97), Institute of Materials Research & Engineering, Singapore (98-2001), and Axcel Photonics (2001-02), in all places with fruitful results and achievements. Since August 2003, Feng has joined National Taiwan University as a professor, currently focusing on materials investigation and MOCVD growth of III-Nitrides, ZnO and SiC, as well as III-V, II-VI, oxides and other nano-materials/devices. He has published nine review books on advanced compound semiconductors and microstructures, porous Si, SiC, III-Nitrides, ZnO. Feng has published ~500 scientific/technical papers with near 200 recorded by SCI and cited >2300 times. Feng is a member of international organizing committee of Asia CVD, 台灣鍍膜科技協會:理/監事, Guest professors at Nankai University, Tianjin Normal University, Huazhong University of Science & Technology, South China Normal University.
