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@article{HYPeng-JoS-2025,
doi = {10.1088/1674-4926/25080028},
url = {https://doi.org/10.1088/1674-4926/25080028},
year = {2025},
publisher = {Chinese Institute of Electronics},
volume = {46},
issue = {11},
pages = {110401},
author = {Peng, Haoyu and Tan, Ping-Heng and Wu, Jiangbin},
title = {Contact planarization and passivation lift tungsten diselenide {PMOS} performance},
journal = {J. Semicond.}
}